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august 2006 rev 4 1/16 16 stp11nm60 - stp11nm60fp STB11NM60 - STB11NM60-1 n-channel 650v @ tj max -0.4 ? -11a to-220/fp/d 2 pak/i 2 pa k mdmesh? power mosfet general features high dv/dt and avalanche capabilities 100% avalanche tested low input capacitance and gate charge low gate input resistance description the mdmesh? is a new revolutionary mosfet technology that associat es the multiple drain process with the company?s powermesh? horizontal layout. the resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. the adoption of the company?s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition?s products. applications switching application internal schematic diagram type v dss r ds(on) i d stp11nm60 650 v <0.45 ? 11a stp11nm60fp 650 v <0.45 ? 11a STB11NM60 650 v <0.45 ? 11a STB11NM60-1 650 v <0.45 ? 11a 1 2 3 1 2 3 1 3 1 2 3 to-220 to-220fp d 2 pak i 2 pak www.st.com order codes part number marking package packaging stb11nk60zt4 b11nk60z d2pak tape & reel stb11nk60z-1 b11nk60z i2pak tube stp11nk60z p11nk60z to-220 tube stp11nk60zfp p11nk60zfp to-220fp tube
contents stp11nm60-stp11nm60fp-STB11NM60-STB11NM60-1 2/16 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
stp11nm60-stp11nm60fp-stb11nm6 0-STB11NM60-1 electrical ratings 3/16 1 electrical ratings table 1. absolute maximum ratings symbol parameter value unit to-220/d2pak/i2pak to-220fp v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25c 11 11 (1) 1. limited only by maximu m temperature allowed a i d drain current (continuous) at t c =100c 7 7 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 44 44 (1) a p tot total dissipation at t c = 25c 160 35 w derating factor 1.28 0.28 w/c dv/dt (3) 3. i sd 11a, di/dt 400a/s, v dd v (br)dss , t j t jmax . peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (dc) -- 2500 v t j operating junction temperature -65 to 150 c t stg storage temperature 150 c table 2. thermal data symbol parameter value unit to-220/d2pak/i2pak to-220fp r thj-case thermal resistance junction-case max 0.78 3.57 c/w r thj-a thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c table 3. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 5.5 a e as single pulse avalanche energy (starting tj=25c, id=iar, vdd=50v) 350 mj
electrical characteristics stp11nm60-stp11nm60fp-STB11NM60-STB11NM60-1 4/16 2 electrical characteristics (t case =25c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v v ds = 600 v, tc=125c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 30v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250a 345v r ds(on) static drain-source on resistance v gs = 10v, i d = 5.5a 0.4 0.45 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration=300s, duty cycle 1.5% forward transconductance v ds > i d(on) x r ds(on)max, i d =5.5a 5.2 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v, f=1 mhz, v gs =0 1000 230 25 pf pf pf c oss eq (2) . 2. c oss eq. is defined as a constant equi valent capacitance giving t he same charging time as c oss when v ds inceases from 0 to 80% v dss equivalent output capacitance v gs =0, v ds =0v to 480v 100 pf r g gate input resistance f=1 mhz gate dc bias = 0 test signal level = 20mv open drain 1.6 ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =400v, i d = 11a v gs =10v 30 10 15 nc nc nc
stp11nm60-stp11nm60fp-STB11NM60-STB11NM60-1 electrical characteristics 5/16 table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd =300 v, i d =5.5a, r g =4.7 ?, v gs =10v (see figure 16) 20 20 ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v dd =400v, i d =11a, r g =4.7 ?, v gs =10v (see figure 16) 6 11 19 ns ns ns table 7. source drain diode symbol parameter test conditions min typ. max unit i sd source-drain current 11 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) 44 a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5% forward on voltage i sd =11a, v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =11a, di/dt = 100a/s, v dd =100v, tj=25c (see figure 16) 390 3.8 19.5 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =11a, di/dt = 100a/s, v dd =100v, tj=150c (see figure 16) 570 5.7 20 ns c a
electrical characteristics stp11nm60-stp11nm60fp-STB11NM60-STB11NM60-1 6/16 2.1 electrical characterist ics (curves) figure 1. safe operating area for to-220/d 2 pa k /i 2 pak figure 2. thermal impedance to220/d 2 pa k /i 2 pa k figure 3. safe operating area for to-220fp figure 4. thermal impedance for to-220fp figure 5. output characterisics figure 6. transfer characteristics
stp11nm60-stp11nm60fp-STB11NM60-STB11NM60-1 electrical characteristics 7/16 figure 7. transconductance figure 8. static drain-source on resistance figure 9. gate charge vs gate-source voltage figure 10. capacitance variations figure 11. normalized gate threshold voltage vs temperature figure 12. normalized on resistance vs temperature
electrical characteristics stp11nm60-stp11nm60fp-STB11NM60-STB11NM60-1 8/16 figure 13. source-drain diode forward characteristics
stp11nm60-stp11nm60fp-stb11n m60-STB11NM60-1 test circuit 9/16 3 test circuit figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive wavefo rm figure 19. switching time waveform
package mechanical data stp11nm60-stp11nm60fp-STB11NM60-STB11NM60-1 10/16 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
stp11nm60-stp11nm60fp-STB11NM60-STB11NM60-1 package mechanical data 11/16 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ?p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
package mechanical data stp11nm60-stp11nm60fp-STB11NM60-STB11NM60-1 12/16 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data
stp11nm60-stp11nm60fp-STB11NM60-STB11NM60-1 package mechanical data 13/16 to-247 mechanical data 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r0.4 0.015 v2 0o 4o d 2 pak mechanical data 3
packaging mechanical data stp11nm60-stp11nm60fp-STB11NM60-STB11NM60-1 14/16 5 packaging mechanical data tape and reel shipment d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
stp11nm60-stp11nm60fp-stb11nm6 0-STB11NM60-1 revision history 15/16 6 revision history table 8. revision history date revision changes 09-sep-2004 1 first release 10-jun-2005 2 typing error, wrong description 26-jul-2006 3 new template, no content change 31-aug-2006 4 typo mistake on order code
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